DatasheetsPDF.com

SCH1411 Datasheet

Part Number SCH1411
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description N-Channel Silicon MOSFET
Datasheet SCH1411 DatasheetSCH1411 Datasheet (PDF)

www.DataSheet.co.kr Ordering number : ENN8104 SCH1411 N-Channel Silicon MOSFET SCH1411 Features • • • General-Purpose Switching Device Applications Low ON-resistance. High-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceram.

  SCH1411   SCH1411






Part Number SCH1419
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description MOS SILICON TRANSISTOR
Datasheet SCH1411 DatasheetSCH1419 Datasheet (PDF)

www.DataSheet4U.com SCH1419 SCH1419 µ µ µ   Ω Ω SCH1419 VIN 1.6 VDD=15V 4V 0V 0.2 0.2 0.05 6 5 4 VIN D 1.6 1.5 ID=800mA RL=18.75Ω VOUT PW=10µs D.C. 1% 0.05 1 2 3 0.5 0.56 G 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : SCH6 P.G 50Ω S SCH1419 0.25 ° ° ° Ω ° Ω ° ° ° ° SCH1419    °  ° ° ° ° ° µ µ ° ° ° SCH1419 .

  SCH1411   SCH1411







Part Number SCH1417
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description General-Purpose Switching Device Applications
Datasheet SCH1411 DatasheetSCH1417 Datasheet (PDF)

www.DataSheet4U.com Ordering number : ENN8164 SCH1417 N-Channel Silicon MOSFET SCH1417 Features • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on .

  SCH1411   SCH1411







Part Number SCH1416
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description N-Channel Silicon MOSFET General-Purpose Switching Device Applications
Datasheet SCH1411 DatasheetSCH1416 Datasheet (PDF)

www.DataSheet4U.com Ordering number : ENN7725 SCH1416 SCH1416 Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a .

  SCH1411   SCH1411







Part Number SCH1410
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description N-Channel Silicon MOSFET
Datasheet SCH1411 DatasheetSCH1410 Datasheet (PDF)

www.DataSheet.co.kr Ordering number : EN8984 SCH1410 N-Channel Silicon MOSFET SCH1410 Features • • • General-Purpose Switching Device Applications Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a cera.

  SCH1411   SCH1411







N-Channel Silicon MOSFET

www.DataSheet.co.kr Ordering number : ENN8104 SCH1411 N-Channel Silicon MOSFET SCH1411 Features • • • General-Purpose Switching Device Applications Low ON-resistance. High-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 30 ±20 2.0 8.0 0.8 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=±16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=10V ID=0.5A, VGS=4V VDS=10V, f=1MHz VDS=10V, f=1MHz VDS=10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 30 1 ±10 1.2 1.2 2.0 130 205 120 30 15 6 4 17 5 170 285 2.6 typ max Unit V µA µA V S mΩ mΩ pF pF pF ns ns ns ns Marking : KL Continued on next page. Any an.


2012-01-09 : BU104    BU111    BU112    BU113    BU134    BU323    BU433    BU522A    BU522    BU606   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)