Elektronische Bauelemente
SCP40N03S-C
40A, 30V, RDS(ON) 6.5mΩ N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SCP40N03S-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
DFN3x3-8J
FEATURES
Battery switch Load switch High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stabilit.
N-Channel MOSFET
Elektronische Bauelemente
SCP40N03S-C
40A, 30V, RDS(ON) 6.5mΩ N-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SCP40N03S-C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications
DFN3x3-8J
FEATURES
Battery switch Load switch High density cell design for ultra low RDS(ON) Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation Special process technology for high ESD capability
APPLICATIONS
SMPS and general purpose applications Hard switched and high frequency circuits Uninterruptible Power Supply
MARKING
CJAB 40N03
= Production Line Indication
PACKAGE INFORMATION
Package
MPQ
DFN3x3-8J
5K
Leader Size 13 inch
REF.
A B C D E F
Millimeter Min. Max. 3.2 3.4
3 3.2 3.25 3.45
3 3.2 0.65BSC. 2.39 2.59
REF.
G H I J K L
Millimeter Min. Max. 1.78 1.98 0.25 0.35
0.35TYP. 0.6TYP. 0.1 0.25 0.7 0.8
SD SD SD GD
ORDER INFORMATION
Part Number
Type
SCP40N03S-C Lead (Pb)-free and Halogen-free
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage Continuous Drain Current 1
TC=25°C
VGS ID
Pulsed Drain Current Single Pulse Avalanche Energy 2
Power Dissipation
Thermal Resistance from Junction to Ambient 1 Thermal Resistance from Junction to Case 1
TA=25°C TC=25°C.