SCS120KG

SCS120KG SiC Schottky Barrier Diode VR 1200V IF 20A QC 70nC Features 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible Construction Silicon carbide epitaxial planer type Outline TO-220AC Datasheet (1) Inner circuit (2) (3) (1) (1) Cathode (2) Cathode (3) Anode (2) (3) Packaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Tube 50 - SCS120KG Absolute maximum ratings (Tj = 25°C) Parameter Symbol Value Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Total power dissipation Junction temperature VRM 1200 VR 1200 IF 20*1 84*2 IFSM 358*3 IFRM 60*4 PD 130*5 Tj 175 Range of storage temperature Tstg 55 to 175 Thermal resistance, junction to case Rth(j-c) 1.1 *1 Tc=108°C *2 PW=8.3ms sinusoidal,Tj=25°C *3 PW=10s square,Tj=25°C *4 Tc=100°C,Tj=150°C,Duty cycle=10% *5 Tc=25°C Unit V V A A A A W °C °C °C/W www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1/5 2013.01 - Rev.B SCS120KG Data Sheet Electrical characteristics (Tj = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. DC blocking voltage VDC IR =0.4mA 1200 - - Forward voltage IF=20A,Tj=25°C VF IF=20A,Tj=175°C - 1.5 1.75 - 2.0 - Reverse current VR=1200V,Tj=25°C IR VR=120V,Tj=175°C - 20 400 - 240 - Total capacitance VR=1V,f=1MHz C VR=800V,f=1MHz - 1300 - 100 - ...