SCS205KG

SCS205KG SiC Schottky Barrier Diode VR 1200V IF 5A QC 17nC lFeatures 1) Shorter recovery time lOutline TO-220ACG (1) lInner circuit (1) (2) (3) Datasheet 2) Reduced temperature dependence 3) High-speed switching possible ●Applications ・ PFC Boost Topology ・ Secondary Side Rectification ・ Data Center ・ PV Power Conditioners (1) Cathode (2) Cathode (3) Anode (2) (3) lPackaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Tube 50 Packing code C17 Marking SCS205KG lAbsolute maximum ratings (Tvj = 25°C unless otherwise specified.) Parameter Symbol Value Unit Reverse voltage (repetitive peak) VRM 1200 V Reverse voltage (DC) VR 1200 V Continuous forward current (Tc= 150°C) *1 IF 5 A Surge non- PW=10ms sinusoidal, Tvj=25°C 23 A repetitive forward PW=10ms sinusoidal, Tvj=150°C IFSM 17 A current PW=10ms square, Tvj=25°C 80 A Repetitive peak forward current IFRM 27 *2 A i2t value PW=10ms, Tvj=25°C PW=10ms, Tvj=150°C ∫i2dt 2.5 1.4 A2s A2s Total power disspation PD 88 *1, 3 W Virtual Junction temperature Tvj 175 °C Range of storage temperature Tstg -55 to +175 °C *1 Limited by maximum Tvj and for Max. RthJC. *2 Tc=100°C, Tvj=150°C, Duty cycle=10%. *3 Tc=25℃. www.rohm.com ©2022 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1/7 TSQ50255-SCS205KGC17 20.Nov.2022 - Rev.004 SCS205KG Datasheet lElectrical characteristics (Tvj = 25°C unless otherwise specified.) Para...