SCS205KG
SiC Schottky Barrier Diode
VR
1200V
IF
5A
QC
17nC
lFeatures 1) Shorter recovery time
lOutline
TO-220AC...
SCS205KG
SiC Schottky Barrier Diode
VR
1200V
IF
5A
QC
17nC
lFeatures 1) Shorter recovery time
lOutline
TO-220ACG
(1)
lInner circuit
(1)
(2) (3)
Datasheet
2) Reduced temperature dependence 3) High-speed switching possible
●Applications ・ PFC Boost Topology ・ Secondary Side Rectification ・ Data Center ・ PV Power Conditioners
(1) Cathode (2) Cathode (3) Anode
(2)
(3)
lPackaging specifications Packaging
Reel size (mm)
Tape width (mm) Type
Basic ordering unit (pcs)
Tube 50
Packing code
C17
Marking
SCS205KG
lAbsolute maximum ratings (Tvj = 25°C unless otherwise specified.)
Parameter
Symbol
Value
Unit
Reverse
voltage (repetitive peak)
VRM
1200
V
Reverse
voltage (DC)
VR
1200
V
Continuous forward current
(Tc= 150°C) *1
IF
5
A
Surge non-
PW=10ms sinusoidal, Tvj=25°C
23
A
repetitive forward PW=10ms sinusoidal, Tvj=150°C
IFSM
17
A
current
PW=10ms square, Tvj=25°C
80
A
Repetitive peak forward current
IFRM
27 *2
A
i2t value
PW=10ms, Tvj=25°C PW=10ms, Tvj=150°C
∫i2dt
2.5 1.4
A2s A2s
Total power disspation
PD
88 *1, 3
W
Virtual Junction temperature
Tvj
175
°C
Range of storage temperature
Tstg
-55 to +175
°C
*1 Limited by maximum Tvj and for Max. RthJC. *2 Tc=100°C, Tvj=150°C, Duty cycle=10%. *3 Tc=25℃.
www.rohm.com
©2022 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
1/7
TSQ50255-SCS205KGC17 20.Nov.2022 - Rev.004
SCS205KG
Datasheet
lElectrical characteristics (Tvj = 25°C unless otherwise specified.)
Para...