SCS210AG

SCS210AG SiC Schottky Barrier Diode VR 650V IF 10A QC 15nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer type lOutline TO-220AC (1) Datasheet lInner circuit (2) (3) (1) (1) Cathode (2) Cathode (3) Anode (2) (3) lPackaging specifications Packaging Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Tube 50 C SCS210AG lAbsolute maximum ratings (Tj = 25°C) Parameter Symbol Value Unit Reverse voltage (repetitive peak) Reverse voltage (DC) Continuous forward current Surge no repetitive forward current Repetitive peak forward current Total power disspation VRM 650 V VR 650 V IF 10*1 A 40*2 A IFSM 150*3 A 31*4 A IFRM 41*5 A PD 78*6 W Junction temperature Tj 175 °C Range of storage temperature Tstg -55 to +175 °C *1 Tc=133°C *2 PW=8.3ms sinusoidal, Tj=25°C *3 PW=10ms square, Tj=25°C *4 PW=8.3ms sinusoidal, Tj=150°C *5 Tc=100°C, Tj=150°C, Duty cycle=10% *6 Tc=25°C www.rohm.com © 2013 ROHM Co., Ltd. All rights reserved. 1/5 2013.04 - Rev.B SCS210AG Data Sheet lElectrical characteristics (Tj = 25°C) Parameter Symbol Conditions Values Min. Typ. Max. DC blocking voltage VDC IR =0.2mA 600 - - IF=10A,Tj=25°C - 1.35 1.55 Forward voltage VF IF=10A,Tj=150°C - 1.55 - IF=10A,Tj=175°C - 1.63 - VR=600V,Tj=25°C - 2 200 Reverse current IR VR=600V,Tj=150°C - 30 - VR=600V,Tj=175°C - 70 - Total capacitance ...