SCT3080AR

SCT3080AR N-channel SiC power MOSFET Datasheet VDSS RDS(on) (Typ.) ID*1 PD 650V 80mΩ 30A 134W lOutline TO-247-4L lInner circuit (1) (2)(3)(4) lFeatures 1) Low on-resistance 2) Fast switching speed 3) Fast reverse recovery 4) Easy to parallel 5) Simple to drive 6) Pb-free lead plating ; RoHS compliant lApplication ・Solar inverters ・DC/DC converters ・Switch mode power supplies ・Induction heating ・Motor drives Please note Driver Source and Power Source are not exchangeable. Their exchange might lead to malfunction. lPackaging specifications Packing Reel size (mm) Tape width (mm) Type Basic ordering unit (pcs) Taping code Marking Tube 30 C14 SCT3080AR lAbsolute maximum ratings (Ta = 25°C) Parameter Drain - Source Voltage Continuous Drain current Tc = 25°C Tc = 100°C Pulsed Drain current Gate - Source voltage (DC) Gate - Source surge voltage (tsurge < 300ns) Recommended drive voltage Junction temperature Range of storage temperature Symbol VDSS ID *1 ID *1 ID,pulse *2 VGSS VGSS_surge*3 VGS_op*4 Tj Tstg Value 650 30 21 75 -4 to +22 -4 to +26 0 / +18 175 -55 to +175 Unit V A A A V V V °C °C www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. TSZ22111・14・001 1/12 TSQ50254-SCT3080AR 31.Jul.2019 - Rev.001 SCT3080AR Datasheet lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage Zero Gate voltage Drain current Gate - Source leakage current Gate - Source leakage current Gate threshold voltage Static Drain ...