SCT50N120

SCT50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mΩ (typ., TJ=150 °C) in an HiP247™ package Datasheet - production data Features  Very tight variation of on-resistance vs. temperature  Very high operating junction temperature capability (TJ = 200 °C)  Very fast and robust intrinsic body diode  Low capacitance Applications Figure 1: Internal schematic diagram  Solar inverters, UPS  Motor drives  High voltage DC-DC converters  Switch mode power supplies D(2, TAB) G(1) S(3) AM01475v1_noZen Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC material allows designers to use an industry-standard outline with significantly improved thermal capability. These features render the device perfectly suitable for high-efficiency and high power density applications. Table 1: Device summary Order code Marking Package Packaging SCT50N120 SCT50N120 HiP247™ Tube April 2017 DocID027989 Rev 4 This is information on a product in full production. 1/11 www.st.com Contents Contents SCT50N120 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical character...