SCTW100N65G2AG

SCTW100N65G2AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 20 mΩ typ., 100 A in an HiP247 package Features Order code SCTW100N65G2AG VDS 650 V RDS(on) max. 26 mΩ ID 100 A HiP247 3 2 1 AEC-Q101 qualified Very fast and robust intrinsic body diode Extremely low gate charge and input capacitance Very high operating junction temperature capability (TJ = 200 °C) D(2, TAB) Applications Main inverter (electric traction) DC/DC converter for EV/HEV On board charger (OBC) G(1) S(3) AM01475v1_noZen Description This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Product status link SCTW100N65G2AG Device summary Order code SCTW100N65G2AG Marking SCT100N65G2AG Package HiP247 Packing Tube DS11643 - Rev 4 - September 2021 For further information contact your local STMicroelectronics sales office. www.st.com SCTW100N65G2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VDS Drain-source voltage Gate-source voltage VGS Gate-source voltage (recommended operational values) Drain current (continuous) at TC = 25 °C ID Drain current (continuous) at TC = 100 °C IDM(1) Drain current (pulsed) PTOT Total power dissipation at TC = 25 °C ...