Diodes. SD101AWS Datasheet

SD101AWS Datasheet PDF


Part SD101AWS
Description Small Signal Schottky Diodes
Feature www.vishay.com SD101AWS, SD101BWS, SD101CWS Vishay Semiconductors Small Signal Schottky Diodes ME.
Manufacture Vishay
Datasheet
Download SD101AWS Datasheet


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SD101AWS
www.vishay.com
SD101AWS, SD101BWS, SD101CWS
Vishay Semiconductors
Small Signal Schottky Diodes
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• For general purpose applications
• The SD101 series is a metal-on-silicon Schottky
barrier device which is protected by a PN
junction guardring
• The low forward voltage drop and fast switching
make it ideal for protection of MOS devices,
steering, biasing and coupling diodes for fast
switching and low logic level applications
• AEC-Q101 qualified available
• Base P/N-E3 - RoHS-compliant, commercial grade
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
PARTS TABLE
PART
ORDERING CODE
SD101AWS
SD101BWS
SD101CWS
SD101AWS-E3-08 or SD101AWS-E3-18
SD101AWS-HE3-08 or SD101AWS-HE3-18
SD101BWS-E3-08 or SD101BWS-E3-18
SD101BWS-HE3-08 or SD101BWS-HE3-18
SD101CWS-E3-08 or SD101CWS-E3-18
SD101CWS-HE3-08 or SD101CWS-HE3-18
INTERNAL
CONSTRUCTION
Single diode
Single diode
Single diode
TYPE MARKING
SA
SB
SC
REMARKS
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
Repetitive peak reverse voltage
Power dissipation (infinite heatsink) (1)
Forward continuous current
Maximum single cycle surge
10 μs square wave
SD101AWS
SD101BWS
SD101CWS
VRRM
VRRM
VRRM
Ptot
IF
IFSM
Note
(1) Valid provided that electrodes are kept at ambient temperature
VALUE
60
50
40
150
30
2
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Thermal resistance junction to ambient air (1)
RthJA
Junction temperature (1)
Tj
Operating temperature range
Top
Storage temperature range
Tstg
Note
(1) Valid provided that electrodes are kept at ambient temperature
VALUE
650
125
-55 to +125
-65 to +150
UNIT
V
V
V
mW
mA
A
UNIT
K/W
°C
°C
°C
Rev. 2.1, 14-Oct-16
1 Document Number: 85680
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000



SD101AWS
www.vishay.com
SD101AWS, SD101BWS, SD101CWS
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
Reverse breakdown voltage
Leakage current
Forward voltage drop
Junction capacitance
Reverse recovery time
IR = 10 μA
VR = 50 V
VR = 40 V
VR = 30 V
IF = 1 mA
IF = 15 mA
VR = 0 V, f = 1 MHz
IF = IR = 5 mA,
recover to 0.1 IR
SD101AWS
SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
SD101AWS
SD101BWS
SD101CWS
V(BR)
V(BR)
V(BR)
IR
IR
IR
VF
VF
VF
VF
VF
VF
CD
CD
CD
trr
60
50
40
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
10 100
A
B 125 °C
C 10
100 °C
1
1 75 °C
TYP.
MAX.
200
200
200
410
400
390
1000
950
900
2.0
2.1
2.2
1
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
mV
ns
ns
ns
ns
0.1 50 °C
0.1
25 °C
0.01
0 0.2 0.4 0.6 0.8 1.0
18477
VF - Forward Voltage (V)
Fig. 1 - Typical Variation of Forward Current vs. Forward Voltage
100
A
B
80 C
60
40
20
0
0 0.2 0.4 0.6 0.8 1.0
18478
VF - Forward Voltage (V)
Fig. 2 - Typical Forward Conduction Curve
0.01
0
10 20 30
40 50
18479
VR - Reverse Voltage (V)
Fig. 3 - Typical Variation of Reverse Current at Various
Temperatures
2.0
1.8 Tj = 25 °C
1.6
1.4
1.2
A BC
1.0
0.8
0.6
0.4
0.2
0
0 10 20 30 40 50
18480
VR - Reverse Voltage (V)
Fig. 4 - Typical Capacitance Curve as a Function of Reverse Voltage
Rev. 2.1, 14-Oct-16
2 Document Number: 85680
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000






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