SD3060AD

SD3060AD（TO3P） 600V FRED DISCRETE DEVICE FAST RECOVER EPITAXIAL DIODE （FRED） Features  Planar passivated chips  Very short recovery time  Extremely low switching losses  Low IRM values  Soft recovery behaviour  100% avalanche tested Applications  Antiparallel diode for high frequency switching devices  Anti saturation diode  Snubber diode  Free wheeling diode in converters and motor control circuits  Rectifiers in switch mode power supplies (SMPS)  Inductive heating and melting  Uninterruptible power supplies (UPS)  Ultrasonic cleaners and welders  Power factor control (PFC) VRRM = 600 V IFAVM = 30 A VF（typ）=1.45V（IF=15A,TVJ=25℃） trr <40 ns（IF = 1 A; di/dt = 200 A/s） Package TO3P Absolute Maximum Ratings Symbol Parameter VRRM IF(AV) IFRM IFSM TJ TSTG Peak Repetitive Reverse Voltage Diode Continuous Forward Current ( TC=100 ℃) Repetitive Peak Surge Current (20kHz Square Wave) Nonrepetitive Peak Surge Current for Per Diode (Halfwave 1 Phase 60Hz) Operating Junction Temperature Range Storage Temperature Range Value 600 30 60 120 -55 to +150 -55 to +150 Units V A A A ℃ ℃ ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified for Per Diode) Symbol VR VF IRM Parameter Test Conditions Min. Cathode to Anode Breakdown Voltage IR = 100µA Diode Forward Voltage IF=15A TC=25℃ Diode Forward Voltage IF=15A TC=125℃ Maximum Reverse Leakage Current VR=600V TC=25℃ VR=600V TC=125℃ 600 Typ. Max. Units 1.45 1.65 1.30 1.50 10 200 V V µA µA Qin...