SD57060

® SD57060 RF POWER TRANSISTORS The LdmoST FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs s s s s EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 60 W with 11.5 dB gain @ 945 MHz BeO FREE PACKAGE M243 epoxy sealed ORDER CODE BRANDING SD57060 TSD57060 DESCRIPTION The SD57060 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz. The SD57060 is designed for high gain and broadband performance operating in common source mode at 28V. It is ideal for base station applications requiring high linearity. PIN CONNECTION 1. Drain 2. Gate ABSOLUTE MAXIMUM RATINGS (Tcase = 25 oC) Symbol V (BR)DSS V GS ID P DI SS Tj T STG Parameter Drain Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc= 70o C) Max. O perating Junction Temperature Storage T emperature Value 65 ± 20 7 108 200 -65 to 150 3.Source Uni t V V A W o o C C THERMAL DATA (Tcase = 70 oC) R th (j-c) R th(c -s)* Junction-Case Thermal Resistance Case-Heatsink T hermal Resistance 1.2 0.45 o o C/W C/W * Determined using a flat aluminum or copper heatsink with thermal compound applied (Dow Corning 340 or equivalent). January 2000 1/8 SD57060 ELECTRICAL SPECIFICATION (Tcase = 25 oC) STATIC Symb ol V (BR)DSS I DSS I GSS V GS(Q) V DS( ON) G FS C ISS C OSS C RSS V GS = 0V V GS = 0V V GS = 20V V DS = 28V V GS = 10V V DS = 10V V GS = 0V V GS = 0V V GS...