SD6030AD（TO3P）
300V FRED DISCRETE DEVICE
FAST RECOVER EPITAXIAL DIODE （FRED）
Features
Planar epitaxial chips Using...
SD6030AD（TO3P）
300V FRED DISCRETE DEVICE
FAST RECOVER EPITAXIAL DIODE （FRED）
Features
Planar epitaxial chips Using high temperature Pt diffusion process Very short recovery time Extremely low switching losses Low IRM values Soft recovery behaviour 100% tested
Applications
Diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
VRRM = 300 V
IFAVM = 60 A
VF（typ）=1.1V（IF=30A,TVJ=25℃）
trr <40 ns（IF = 1 A; di/dt = 200 A/s）
Package
TO3P
Absolute Maximum Ratings
Symbol
Parameter
VRRM IF(AV) IFRM
Peak Repetitive Reverse
Voltage Diode Continuous Forward Current ( TC=100 ℃) Repetitive Peak Surge Current (20kHz Square Wave)
IFSM TJ
Nonrepetitive Peak Surge Current for Per Diode (Halfwave 1 Phase 60Hz)
Operating Junction Temperature Range
TSTG
Storage Temperature Range
Value 300 60 120
300 -55 to +150 -55 to +150
Units V A A
A ℃ ℃
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified for Per Diode)
Symbol VR VF
IRM
Parameter
Test Conditions Min.
Cathode to Anode Breakdown
Voltage IR = 100µA
Diode Forward
Voltage Diode Forward
Voltage
IF=30A TC=25℃ IF=30A TC=125℃
Maximum Reverse Leakage Current
VR=300V TC=25℃ VR=300V TC=125℃
300
Typ. Max. Units
1.10 1.20 0.95 1.15
10 100
V V µA µA
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