SD8040AD（TO3P）
400V FRED DISCRETE DEVICE
FAST RECOVER EPITAXIAL DIODE （FRED）
Features
Planar epitaxial chips Using...
SD8040AD（TO3P）
400V FRED DISCRETE DEVICE
FAST RECOVER EPITAXIAL DIODE （FRED）
Features
Planar epitaxial chips Using high temperature Pt diffusion process Very short recovery time Extremely low switching losses Low IRM values Soft recovery behaviour 100% tested
Applications
Diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
VRRM = 400 V
IFAVM = 80 A
VF（typ）=1.1V（IF=40A,TVJ=25℃）
trr <50 ns（IF = 1 A; di/dt = 200 A/s）
Package
TO3P
Absolute Maximum Ratings
Symbol
Parameter
VRRM IF(AV) IFRM IFSM
TJ
Peak Repetitive Reverse
Voltage
Diode Continuous Forward Current ( TC=100 ℃)
Repetitive Peak Surge Current (20kHz Square Wave)
Nonrepetitive Peak Surge Current for Per Diode (Halfwave 1 Phase 60Hz) Operating Junction Temperature Range
TSTG
Storage Temperature Range
Value 400 80 160
400 -55 to +150 -55 to +150
Units V A A
A ℃ ℃
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified for Per Diode)
Symbol VR VF
IRM
Parameter
Test Conditions Min.
Cathode to Anode Breakdown
Voltage IR = 100µA
Diode Forward
Voltage Diode Forward
Voltage
IF=40A TC=25℃ IF=40A TC=125℃
Maximum Reverse Leakage Current
VR=400V TC=25℃ VR=400V TC=125℃
400
Typ. Max. Units
1.1 1.3 0.95 1.2
100 10
V V µA mA
No. 1 Total 2...
