SDB310WAF

Semiconductor Features Low power rectified Silicon epitaxial type High reliability Ordering Information Type No. Marking SDB310WA DB2 Outline Dimensions SDB310WAF Schottky Barrier Diode Package Code SOT-23F unit : mm 2.4±0.1 1.6±0.1 1 3 2 3 2.9±0.1 1.90 BSC 0.15±0.05 0.4±0.05 12 PIN Connections 1. Cathode 2. Cathode 3. Anode, Anode 0.9±0.1 0~0.1 KSD-2069-000 1 SDB310WAF Absolute maximum ratings Characteristic Symbol Ratings Reverse voltage Repetitive peak forward current Forward current Non-repetitive peak forward current(10ms) Power dissipation Junction temperature Storage temperature * : δ = D/T =0.33 (T<1S) VR IFRM* IF IFSM PD Tj Tstg 30 0.5 0.2 2 150 150 -55 ~ 150 * : Unit ratings. Total rating=Unit rating×1.5 Electrical Characteristics Characteristic Symbol Test Condition Min. Forward voltage 1 Forward voltage 2 Reverse current Total capacitance Reverse recovery time VF(1) VF(2) IR CT trr IF=10mA IF=30mA VR=30V VR=1V, f=1MHz IF= IR=10mA, IRR= 1mA, RL=100Ω - Typ. - Ta=25°C Unit V A A A mW °C °C Ta=25°C Max. Unit 0.4 V 0.5 V 1 µA 10 pF 5 ns KSD-2069-000 2 Electrical Characteristic Curves Fig. 1 IF-VF SDB310WAF Fig. 2 IR -VR Fig. 3 CT-VR KSD-2069-000 3 ...