Semiconductor
Features
• Low power rectified • Silicon epitaxial type • High reliability
Ordering Information
Type No...
Semiconductor
Features
Low power rectified Silicon epitaxial type High reliability
Ordering Information
Type No.
Marking
SDB310WKF
DB8
Outline Dimensions
SDB310WKF
Schottky Barrier Diode
Package Code SOT-23F
unit : mm
2.9±0.1 1.90 BSC
2.4±0.1 1.6±0.1
1 3
2
3
0.15±0.05 0.4±0.05
0.9±0.1
0~0.1
12
PIN Connections 1. Anode 2. Anode 3. Cathode, Cathode
KSD-2070-000
1
SDB310WKF
Absolute maximum ratings
Characteristic
Symbol
Ratings
Reverse
voltage Repetitive peak forward current Forward current Non-repetitive peak forward current(10ms) Power dissipation Junction temperature Storage temperature * : δ = D/T =0.33
(T<1S)
VR IFRM*
IF IFSM PD Tj Tstg
30 0.5 0.2 2 150 150 -55 ~ 150
* : Unit ratings. Total rating=Unit rating× 1.5
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min.
Forward
voltage 1 Forward
voltage 2 Reverse current Total capacitance Reverse recovery time
VF(1) VF(2)
IR CT trr
IF=10mA
IF=30mA VR=30V VR=1V, f=1MHz
IF= IR=10mA, IRR= 1mA, RL=100Ω
-
Typ.
-
Ta=25°C Unit
V A A A mW °C °C
Ta=25°C Max. Unit
0.4 V 0.5 V 1 µA 10 pF 5 ns
KSD-2070-000
2
Electrical Characteristic Curves
Fig. 1 IF-VF
SDB310WKF
Fig. 2 IR -VR
Fig. 3 CT-VR
KSD-2070-000
3
...