Semiconductor
Applications
• Portable equipment battery applications • SMPS applications
Features
• Very low forward v...
Semiconductor
Applications
Portable equipment battery applications SMPS applications
Features
Very low forward
voltage: VF=0.40Max. Low switching loss High reliability
Ordering Information
Type No.
Marking
SDB330
3A30
Package Code SOD-106
Outline Dimensions
SDB330
Schottky Barrier Diode
unit : mm
4.60~5.00 3.90~4.10
1.49 Max.
2.50~2.70
1.25~1.35
CATHODE MARK
KSD-D6A005-001
0.27 Max.
21
PIN Connections 1. Anode 2. Cathode
1
Absolute Maximum Ratings
Characteristic
Peak reverse
voltage
Reverse
voltage
Forward current Peak surge forward current (Non-repetitive 60Hz sine wave) Junction temperature
Storage temperature range
Symbol
VRM VR IF IFSM TJ Tstg
Rating
30 30 3.0 30 150 -55~150
SDB330
(Ta=25°C)
Unit
V V A A °C °C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Forward
voltage
VF 1)
IF=3A
Reverse current
IR VR=30V
Total capacitance
CT VR=10V, f=1MHZ
Thermal resistance
Rth Junction to ambient 2)
1) Pulse test : tP≤380 ㎲, Duty cycle≤2%
2) Device mounted on glass epoxy PCB (recommanderable minimum solder land)
(Ta=25°C)
Min. Typ. Max. Unit
- 0.35 0.40
V
--
5 mA
- 160
-
pF
- - 76 °C/W
※ Recommend PCB solder land [Unit : mm]
KSD-D6A005-001
2
Electrical Characteristic Curves
Fig. 1 IF - VF
Fig. 2 IR - VR
SDB330
Fig. 3 CT - VR
Fig. 4 PF - IF
Fig. 5 IFSM – Number of cycle
Fig. 6 IO derating - TC
KSD-D6A005-001
3
SDB330
The AUK Corp. products are intended for the use as components in general electroni...