Semiconductor
SDT12D
TVS Diode
Features
• Transient protection for data lines to IEC61000-4-2(ESD) 15KV(air), 8KV(cont...
Semiconductor
SDT12D
TVS Diode
Features
Transient protection for data lines to IEC61000-4-2(ESD) 15KV(air), 8KV(contact ) Small package for use in portable electronics Low operating and clamping
voltage
Applications
Cellular Handsets and Accessories Microprocessor based equipment Notebooks, Desktops and Servers
Ordering Information
Type NO. SDT12D
PIN Connection
Marking
T7 □
①② ①Device Code ② Year & Week Code
Package Code SOD-323
21
21
1. Anode 2. Cathode
KSD-D6C008-001
1
SDT12D
Absolute maximum ratings
Characteristic
Peak pulse power ( tp = 8/20 ㎲ ) Peak pulse current (tp = 8/20 ㎲ )
Lead soldering temperature Juction temperature Storage temperature range
Symbol
PPK IPP TL TJ Tstg
Ratings
350 15 260 (10sec. ) 150 -55 ~ 150
Ta=25°C
Unit
W A °C °C °C
Electrical Characteristics
Characteristic
Symbol
Reverse stand-off
voltage Reverse breakdown
voltage
VRWM VR
Reverse leakage current
IR
Clamping
voltage
VC
Junction capacitance
CJ
Test Condition
It=1mA VR=12V IPP=5A, tp=8/20 ㎲ VR=0V, f=1MHz
Min.
13.3
Typ.
Ta=25°C
Max. Unit
12 V V
1㎂ 19 V
150 pF
KSD-D6C008-001
2
Electrical Characteristics Curves
Fig. 1 Power derating curve
SDT12D
Fig. 2 None-repetitive peak pulse power vs pulse time
Fig. 3 Pulse Waveform
Fig. 4 Clamping
voltage vs peak pulse current
KSD-D6C008-001
3
Outline Dimension
SDT12D
KSD-D6C008-001
4
SDT12D
The AUK Corp. products are intended for the use as components in general electronic equipment (Office and communica...