SDT517

Elektronische Bauelemente SDT517 N & P-Ch Enhancement Mode MOSFET N-Ch: 6A, 12V, RDS(ON) 24 mΩ P-Ch: -4.1A, -12V, RDS(ON) 45 mΩ RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free FEATURES Surface Mount Package Super High Density Cell Design for Extremely Low RDS(ON) Exceptional On-resistance and Maximum DC Current Capability DFN2x2-6L-J APPLICATIONS Power Management In Note Book Portable Equipment DC/DC Converter Load Switch MARKING 517 Date Code PACKAGE INFORMATION Package MPQ DFN2×2-6L-J 3K Leader Size 7 inch REF. A B C D E F Millimeter Min. Typ. Max. 2.00 BSC. 2.00 BSC. 0.675 0.75 0.80 0.30 Typ. 0.75 0.86 1.1 0.65BSC REF. G H J K L P Millimeter Min. Typ. Max. 0.30 BSC 0.20 BSC 0 -- 0.06 0.15 0.20 0.25 0.20 0.30 0.38 0.52 0.65 0.72 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current 1 VGS ID Pulsed Drain Current(tp=10us) IDM Continous Source-Drain Diode Current Lead Temperature for Soldering Purposes (1/8’’ from case for 10 s) IS TL Operating Junction and Storage Temperature Range TJ, TSTG Thermal Resistance Rating Maximum Thermal Resistance from Junction to Ambient 1 RθJA N-ch 12 ±12 6 24 6 Rating P-ch -12 ±12 -4.1 -16.4 -4.1 260 150, -55~150 167 Unit V V A A A °C °C °C / W http://www.SeCoSGmbH.com/ 12-Sep-2017 Rev. B Any changes of specification will not be informed individually. Page 1 of 5 Elektronische B...