IGBT
SEMiX151GAL12E4s
SEMiX® 1s
Trench IGBT Modules
SEMiX151GAL12E4s
Features
• Homogeneous Si • Trench = Trenchgate technol...
Description
SEMiX151GAL12E4s
SEMiX® 1s
Trench IGBT Modules
SEMiX151GAL12E4s
Features
Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature
coefficient High short circuit capability UL recognized, file no. E63532
Typical Applications*
AC inverter drives UPS Electronic Welding
Remarks
Case temperature limited to TC=125°C max.
Product reliability results are valid for Tj=150°C
Absolute Maximum Ratings
Symbol Conditions
IGBT
VCES IC
Tj = 25 °C Tj = 175 °C
Tc = 25 °C Tc = 80 °C
ICnom
ICRM
ICRM = 3xICnom
VGES tpsc Tj
VCC = 800 V VGE ≤ 20 V VCES ≤ 1200 V
Tj = 150 °C
Inverse diode
IF
Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Freewheeling diode
IF
Tj = 175 °C
Tc = 25 °C Tc = 80 °C
IFnom
IFRM
IFRM = 3xIFnom
IFSM
tp = 10 ms, sin 180°, Tj = 25 °C
Tj
Module
It(RMS)
Tterminal = 80 °C
Tstg
Visol
AC sinus 50Hz, t = 1 min
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES
Cies Coes Cres QG RGint
IC = 150 A VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C
chiplevel
VGE = 15 V chiplevel
Tj = 25 °C Tj = 150 °C Tj = 25 °C Tj = 150 °C
VGE=VCE, IC = 6 mA
VGE = 0 V VCE = 1200 V
Tj = 25 °C Tj = 150 °C
VCE = 25 V VGE = 0 V
f = 1 MHz f = 1 MHz f = 1 MHz
VGE = - 8 V...+ 15 V Tj = 25 °C
Values
1200 232 179 150 450 -20 ... 20
10
-40 ... 175
189 141 150 450 900 -40 ... 175
189 141 150 450 900 -40 ... 175
600 -40 ... 125
4000
Unit
V A A A A V
µs
°C...
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