SF50N06

POWER MOSFET Features  60V,50A N-Channel MOSFET  RDS(on)(typ.)=6mΩ@VGS=10V  High ruggedness  Fast switching  100% avalanche tested  Exceptional dv/dt capability Applications  Switching application  Motor drive SF50N06P SF50N06F SF50N06 SF50N06I SF50N706D Absolute Maximum Ratings Symbol Parameter VDSS VGS ID Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(TC=25 ℃) Continuous Drain Current(TC=100℃) IDM EAS PD TJ TSTG Pulsed Drain Current(Note 1 ) Single Pulsed Avalanche Energy(Note 2) Maximum Power Dissipation ( TC=25 ℃) Maximum Power Dissipation ( TC=100℃) Operating Junction Temperature Range Storage Temperature Range Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2.Starting TJ=25℃,L=1.0mH,RG=50Ω,ID=37A,VGS=10V Value 60 ±25 50 40 200 100 70 34 -55 to +175 -55 to +175 Units V V A A A mJ W W ℃ ℃ WWW.SITECH.COM Total 6 Pages 1 [email protected] Thermal data Symbol Rth J-C Parameter Thermal Resistance, Junction to case SF50N06 Max. 2.1 Units ℃/W Electrical Characteristics (TC=25℃ unless otherwise noted) Symbol Parameter Test Conditions BVDSS IDSSS IGSS VGS(th) RDS(on) gfs Qg Qgs Qgd t d(on) tr t d(off) tf Ciss Coss Crss RGint Drain-Source Breakdown Voltage Drain-Source Leakage Current Gate Leakage Current, Forward Gate Leakage Current, Reverse Gate Threshold Voltage Collector-Emitter Saturation Voltage Forward Transconductance Total Gate Charge Gate-Source Charge Gate-Drain Charge VGS=0V, ID=2...