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SFH213FA

OSRAM

Silicon PIN Photodiode

Prowdwuwk.todsartaemn-bolast.tco|mVersion 1.1 SFH 213 FA   SFH 213 FA Radial T1 3/4 Silicon PIN Photodiode Application...


OSRAM

SFH213FA

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Prowdwuwk.todsartaemn-bolast.tco|mVersion 1.1 SFH 213 FA   SFH 213 FA Radial T1 3/4 Silicon PIN Photodiode Applications ——Electronic Equipment ——Highbay Industrial ——Industrial Automation (Machine controls, Light barriers, Vision controls) ——Smoke Detectors ——White Goods Features: ——Package: black epoxy ——ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) ——Wavelength range (S10%) 750 nm to 1100 nm ——Short switching time (typ. 5 ns) ——5 mm LED plastic package Ordering Information  Type  Photocurrent  Photocurrent  typ. Ordering Code Ee = 1 mW/cm²; λ = 870 nm; VR = 5 V Ee = 1 mW/cm²; λ = 870 nm; VR = 5 V IP IP SFH 213 FA ≥ 65 µA 90 µA Q62702P1671  1 Version 1.3 | 2018-05-04 SFH 213 FA   Maximum Ratings TA = 25 °C Parameter Operating Temperature Storage temperature Reverse voltage Reverse voltage t ≤ 2 min Total power dissipation ESD withstand voltage acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) Symbol Top Tstg VR VR Ptot VESD min. max. min. max. max. max. max. Values -40 °C 100 °C -40 °C 100 °C 20 V 50 V 150 mW 2 kV   2 Version 1.3 | 2018-05-04  SFH 213 FA   Characteristics TA = 25 °C Parameter Wavelength of max sensitivity Spectral range of sensitivity Radiant sensitive area Dimensions of active chip area Half angle Dark current VR = 20 V Spectral sensitivity of the chip λ = 870 nm Quantum yield of the chip λ = 870 nm Open-circuit voltage Ee = 0.5 mW/cm²; λ = 870 nm Short-circuit current Ee = 0.5 mW/cm²; λ = 870 nm Rise time V...




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