SGA4563Z

SGA4563ZSGA4563Z DC to 2500MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-363 Product Description The SGA4563Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Gain (dB) Return Loss (dB) Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS  SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT RF MEMS Gain & Return Loss vs. Frequency 32 GAIN VD= 3.5 V, ID= 45 mA (Typ.) 24 ORL 16 IRL 8 0 012345 Frequency (GHz) 0 -10 -20 -30 -40 6 Features  High Gain: 20.2dB at 1950 MHz  Cascadable 50  Operates from Single Supply  Low Thermal Resistance Package Applications  PA Driver Amplifier  Cellular, PCS, GSM, UMTS  IF Amplifier  Wireless Data, Satellite Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 25.6 dB 850MHz 20.2 dB 1950MHz 18.6 dB 2400MHz Output Power at 1dB Compression 15.0 dBm 850MHz 12.8 dBm 1950 MHz Output Third Intercept Point 27.1 dBm 850 MHz 26.2 dBm 1950 MHz Bandwidth Determined by Return Loss 2500 MHz >10dB Input Return Loss 19.9 dB 1950MHz Output Return Loss ...