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SGA6589Z

RFMD

HIGH GAIN SiGe HBT

SGA6589ZDC to 3500MHz, Cascadable Low Noise, High Gain SiGe HBT SGA6589Z DC to 3500MHz, CASCADABLE LOW NOISE, HIGH GAI...


RFMD

SGA6589Z

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Description
SGA6589ZDC to 3500MHz, Cascadable Low Noise, High Gain SiGe HBT SGA6589Z DC to 3500MHz, CASCADABLE LOW NOISE, HIGH GAIN SiGe HBT Package: SOT-89 Product Description The SGA6589Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high FT and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. Gain (dB) Return Loss (dB) Optimum Technology Matching® Applied GaAs HBT GaAs MESFET InGaP HBT SiGe BiCMOS Si BiCMOS  SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS Gain & Return Loss vs. Frequency VD= 4.9 V, ID= 80 mA (Typ.) 32 GAIN 24 IRL ORL 16 8 0 01234 Frequency (GHz) 0 -10 -20 -30 -40 5 Features  High Gain: 20dB at 1950MHz  Cascadable 50  Operates from Single Supply  Low Thermal Resistance Package Applications  PA Driver Amplifier  Cellular, PCS, GSM, UMTS  IF Amplifier  Wireless Data, Satellite Parameter Specification Min. Typ. Max. Unit Condition Small Signal Gain 23.0 25.5 28.1 dB 850MHz 20.0 dB 1950MHz 18.2 dB 2400MHz Output Power at 1dB Compression 21.5 dBm 850 MHz 19.0 dBm 1950 MHz Output Third Intercept Point 32.5 dBm 850 MHz 32.0 dBm 1950 MHz Bandwidth Determined by Ret...




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