MMIC amplifier. SGL0263Z Datasheet

SGL0263Z Datasheet PDF


Part Number

SGL0263Z

Description

high performance SiGe HBT MMIC amplifier

Manufacture

RF Micro Devices

Total Page 6 Pages
Datasheet
Download SGL0263Z Datasheet



SGL0263Z
SGL0263Z
1400MHz to
2500MHz Sili-
con Germa-
nium
Cascadable
Low Noise
Amplifier
SGL0263Z
1400MHz to 2500MHz SILICON GERMANIUM
CASCADABLE LOW NOISE AMPLIFIER
Package: SOT-363
Product Description
The SGL0263Z is a high performance SiGe HBT MMIC low noise amplifier
featuring 1 micron emitters with FT up to 50GHz. This device has an inter-
nal temperature compensation circuit permitting operation directly from
supply voltages as low as 2.5V. The SGL0263Z has been characterized at
VD=3V for low power and 4V for medium power applications. Only two DC-
blocking capacitors, 2 input matching components, a bias resistor, and an
optional RF choke are required for operation from 1400MHz to 2500MHz.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
InP HBT
Temperature
Compensation
Circuit
RF In
VS
RF Out / VS
Features
High Input/Output Intercept
Low Noise Figure: 1.3dB typ.
at 1900MHz
Low Power Consumption
Single Voltage Supply Opera-
tion
Internal Temperature Com-
pensation
Applications
Receivers, GPS, RFID
Cellular, Fixed Wireless, Land
Mobile
Parameter
Specification (VS=3V)
Min. Typ. Max.
Specification (VS=4V)
Min. Typ. Max.
Small Signal Gain
12.1 13.4 14.7
13.8
12.5
12.9
10.8
11.3
Output Power at 1dB Compres-
sion
3.5
5.5
11.4
6.8 12.3
7.9 12.8
Input Third Order Intercept
Point
Tone Spacing=1MHz, POUT per
tone = -13 dBm
7.5
9.5
15.1
13.5
16.8
15.5
18.4
Noise Figure
1.3 1.7
1.9
1.5 2.1
2.0 2.8
Input Return Loss
10.0
13.3
21.9
Output Return Loss
10.0
12.9
17.4
Reverse Isolation
20.7
21.0
Device Current
9.0
12.5
15.0
23.0
Thermal Resistance (Junction
to Lead)
255
Test Conditions: 1400MHz to 2500MHz Application Circuit, TLEAD=25°C, Z0=ZL=50
Unit Condition
dB 1900MHz
dB 2100MHz
dB 2400MHz
dBm 1900MHz
dBm 2100MHz
dBm 2400MHz
dBm 1900MHz
dBm
dBm
dB
dB
dB
dB
dB
dB
mA
°C/W
2100 MHz
2400 MHz
1900MHz, ZS=50
2100MHz, ZS=50
2400MHz, ZS=50
1900 MHz
1900 MHz
1900 MHz
DS111011
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
1 of 6

SGL0263Z
SGL0263Z
Absolute Maximum Ratings
Parameter
Rating
Unit
Max Device Current (ID)
Max Device Voltage (VD)
Max RF Input Power
45 mA
5V
+10 dBm
Max Junction Temp (TJ)
Operating Temp Range (TL)
Max Storage Temp
+150
-40 to +85
+150
°C
°C
°C
ESD 1A Class
MSL 1
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Typical RF Performance Over Lead Temperature at 3 V and 4 V -- 1400-2500 MHz Evaluation Board
Input IP3 vs. Frequency Over Temperature
20
P1dB vs. Frequency Over Temperature
16
18 14
16 12
14 10
12 8
10
8
6
4
1400
1500
1600
1700
1800
1900 2000
Freq. (MHz)
2100
2200
T=-40°C, VS=3 V
T=+25°C, VS=3 V
T=+85°C, VS=3 V
T=-40°C, VS=4 V
T=+25°C, VS=4 V
T=+85°C, VS=4 V
2300 2400 2500
6
4
2
0
1400
1500
1600
1700
1800
1900 2000
Freq. (MHz)
2100
2200
T=-40°C, VS=3 V
T=+25°C, VS=3 V
T=+85°C, VS=3 V
T=-40°C, VS=4 V
T=+25°C, VS=4 V
T=+85°C, VS=4 V
2300 2400 2500
Noise Figure vs. Frequency at TLEAD=+25C
3.5
3.0
2.5
Output IP3 vs. Frequency Over Temperature
34
32
30
28
2.0
1.5
1.0
0.5
1400
1600
1800
2000
Freq. (MHz)
Vs=3 V
Vs=4 V
2200
2400
26
24
22
20
18
1400
1500
1600
1700
1800
1900 2000
Freq. (MHz)
2100
2200
T=-40°C, VS=3 V
T=+25°C, VS=3 V
T=+85°C, VS=3 V
T=-40°C, VS=4 V
T=+25°C, VS=4 V
T=+85°C, VS=4 V
2300 2400 2500
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6
Device Voltage (Vd) vs. Device Current (Id)
for T = -40C, +25C, & +85C
Load lines for Vs =+5 Volts, Rs=43 W and 180 W
Vs= +5 V, Rs = 43 W
Vs = +5 V, Rs = 180 W
T=-40C
T=+25C
T=+85C
8 10 12 14 16 18 20 22 24 26
Id (mA)
2 of 6
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DS111011




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