SGM2310A

Elektronische Bauelemente SGM2310A 5 A, 60 V, RDS(ON) 115 mΩ N-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-89 DESCRIPTION The SGM2310A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SGM2310A is universally used for all commercial-industrial applications. FEATURES Simple drive requirement Super high density cell design for extremely low RDS(ON) MARKING D 24 A Top View C B KL E 123 D F GH 4 J REF. A B C D E F Millimeter Min. Max. 4.40 4.60 4.05 4.25 2.40 2.60 1.40 1.60 3.00 REF. 0.40 0.52 REF. G H J K L Millimeter Min. Max. -0.89 1.20 0.35 0.41 0.70 0.80 1.50 REF. 2310A = Date code ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction & Storage Temperature THERMAL DATA PARAMETER Thermal Resistance Junction-Ambient3(Max). 1 G 3 S SYMBOL VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @ TA = 25°C TJ, TSTG SYMBOL RθJA RATINGS 60 ±20 5.0 4.0 10 1.5 0.01 -55~150 VALUE 83.3 UNIT V V A A A W W / °C °C UNIT °C / W http://www.SeCoSGmbH.com/ 16-Dec-2009 Rev. A Any changes of specification will not be informed individually. Page 1 of 4 Elektronische Bauelemente SGM2310A 5 A, 60 V, RDS(ON) 115 mΩ N-Channel Enhancement Mode Power MOSFET ELECTRICAL CHARA...