SGN04G72G2BQ2SA-DCRT

Data Sheet Rev.1.0 28.11.2013 4096MB DDR3 – SDRAM ECC SO-DIMM 204 Pin ECC SO-UDIMM SGN04G72G2BQ2SA-xx(E/W)RT 4GByte in FBGA Technology RoHS compliant Features:       204-pin 72-bit DDR3 Small Outline, Dual-In-Line Double Data Rate synchronous DRAM Module Module organization: dual rank 512M x 72 VDD = 1.5V ±0.075V, VDDQ 1.5V ±0.075V 1.5V I/O ( SSTL_15 compatible) Fly-by-bus with termination for C/A & CLK bus 2 On-board I C temperature sensor with integrated serial presence-detect (SPD) EEPROM This module is fully pin and functional compatible to the JEDEC EP3-12800 DDR3 SDRAM 72bit-SO-DIMM design spec. and JEDEC- Standard MO-268. (see www.jedec.org) The pcb and all components are manufactured according to the RoHS compliance specification [EU Directive 2002/95/EC Restriction of Hazardous Substances (RoHS)] DDR3 - SDRAM component Samsung K4B2G0846Q 256Mx8 DDR3 SDRAM in PG-TFBGA-78 package 8-bit prefetch architecture Programmable CAS Latency, CAS Write Latency, Additive Latency, Burst Length and Burst Type. On-Die-Termination (ODT) and Dynamic ODT for improved signal integrity. Refresh, Self Refresh and Power Down Modes. ZQ Calibration for output driver and ODT. System Level Timing Calibration Support via Write Leveling and Multi Purpose Register (MPR) Read Pattern. Options:  Data Rate / Latency DDR3 1333 MT/s CL9 DDR3 1600 MT/s CL11 Module density 4096MB with 18 dies and 2 rank Standard Grade Grade E Grade W (TA) (TC) (TA) (TC) (TA) (TC) 0°C to 70°C 0°C to 85°C 0°C t...