SGT40T120FD3P7

Silan Microelectronics SGT40T120FD3P7_Datasheet 40A, 1200V IGBT DESCRIPTION The SGT40T120FD3P7 IGBT is fabricated using Silan 4rd generation of trench field stop technology, features low conduction loss and switching loss, positive temperature coefficient for easy parallel operation. This device is applicable to induction heating, UPS, SMPS, and PFC fields. FEATURES  40A, 1200V, VCE(sat)(typ.)=2.3V@IC=40A  Low conduction loss  Ultra fast switching  High breakdown voltage NOMENCLATURE 1 G C 2 3 E 12 3 TO-247-3L IGBT series Current, 70: 70A N : N Channel NE : N-channel planar gate with ESD T : Field Stop 3/4 U : Field Stop 4+ V : Field Stop 5 W: Field Stop 6 X : Field Stop 7 Voltage, 65: 650V 120: 1200V SGT 40 T 120 F D 3 P7 ORDERING INFORMATION Part No. Package SGT40T120FD3P7 TO-247-3L Marking 40T120FD3 Package P7 : TO-247-3L 1,2,3… : Version No. Blank: Standard diode M : Standard Diode, full range R : Rapid Diode B : Rapid Diode, full range S : Soft Diode, full range D : Packaged with fast recovery diode R : RC IGBT L : Ultra low switching，recommended frequency ~2KHz Q : Low switching，recommended frequency2~20KHz S : Standard frequency ，recommended frequency5~40KHz F : Fast switching，recommended frequency10~60KHz UF : Ultra fast switching，recommended frequency 40KHz~ Hazardous substance control Pb free Packing Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //www.silan.com.cn Rev.:1.2 Page 1 of 8 Silan Microelectronics SGT40T120FD3P7_Datasheet AB...