4V Drive Nch+Nch MOSFET
SH8K22
Structure Silicon N-channel MOSFET
Features 1) Built-in G-S Protection Diode. 2) Small...
4V Drive Nch+Nch
MOSFET
SH8K22
Structure Silicon N-channel
MOSFET
Features 1) Built-in G-S Protection Diode. 2) Small surface Mount Package (SOP8).
Application Power switching, DC / DC converter, Inverter
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Packaging specifications
Package
Type
Code
Basic ordering unit (pieces)
SH8K22
Taping TB 2500
Absolute maximum ratings (Ta=25C)
Parameter
Symbol Limits
Unit
Drain-source voltage Gate-source voltage
Drain current
Source current (Body diode)
Continuous Pulsed Continuous Pulsed
Total power dissipation
Chanel temperature Range of Storage temperature *1 PW 10ｓ、Duty cycle 1
VDSS
45
V
VGSS
±20
V
ID ±4.5
A
IDP *1
±18
A
IS 1
A
ISP *1
18
A
PD *2
2 1.4
W / TOTAL W / ELEMENT
Tch 150
oC
Tstg -55 to +150
oC
*2 Mounted on a ceramic board
Inner circuit
(8) (7)
(6) (5) (8) (7) (6) (5)
∗2 ∗2
(1) (2) (3) (4)
∗1 ∗1
(1) (2)
(3) (4)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain
∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.
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1/4
2009.12 - Rev.A
SH8K22
Electrical characteristics (Ta=25C)
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