4V Drive Nch+Nch MOSFET
SH8K4
Structure Silicon N-channel MOSFET
Features 1) Low on-resistance. 2) Built-in G-S Prote...
4V Drive Nch+Nch
MOSFET
SH8K4
Structure Silicon N-channel
MOSFET
Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small surface Mount Package (SOP8).
Application Power switching, DC / DC converter.
Dimensions (Unit : mm)
SOP8
Each lead has same dimensions
Packaging specifications
Package
Type
Code Basic ordering unit (pieces)
SH8K4
Taping TB 2500
Absolute maximum ratings (Ta=25C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous Pulsed
Source current (Body diode)
Continuous Pulsed
Total power dissipation
Channel temperature
Storage temperature
∗1 Pw 10μs, Duty cycle 1% ∗2 MOUNTED ON A CERAMIC BOARD.
Symbol
VDSS VGSS
ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg
Limits 30 ±20 ±9.0 ±36 1.6 6.4 2 150
−55 to +150
Unit V V A A A A W °C °C
Thermal resistance
Parameter Channel to ambient
∗MOUNTED ON A CERAMIC BOARD.
Symbol Rth (ch-a) ∗
Limits 62.5
Unit °C / W
Inner circuit
(8) (7)
(6) (5) (8) (7) (6) (5)
∗2 ∗2
(1) (2) (3) (4)
∗1 ∗1
(1) (2)
(3) (4)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
(1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain
∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded.
www.rohm.com ○c 2009 ROHM Co., Ltd. All rights reser...
