SH8K5

4V Drive Nch+Nch MOSFET SH8K5 Structure Silicon N-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small surface Mount Package (SOP8). Application Power switching, DC / DC converter. Each lead has same dimensions Dimensions (Unit : mm) SOP8 Packaging specifications Package Type SH8K5 Code Basic ordering unit (pieces) Taping TB 2500 Inner circuit (8) (7) (6) (5) (8) (7) (6) (5) ∗2 ∗2 (1) (2) (3) (4) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Total power dissipation Channel temperature Storage temperature ∗1 Pw 10μs, Duty cycle 1% ∗2 MOUNTED ON A CERAMIC BOARD. ∗1 ∗1 (1) (2) (3) (4) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits 30 ±20 ±3.5 ±14 1.6 6.4 2 150 −55 to +150 Unit V V A A A A W °C °C ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. Thermal resistance Parameter Channel to ambient ∗MOUNTED ON A CERAMIC BOARD. Symbol Rth (ch-a) ∗ Limits 62.5 Unit °C / W www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/3 200...