SH8M12

Data Sheet 4V Drive Nch + Pch MOSFET SH8M12  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) High power package(SOP8). 3) Low voltage drive(4V drive). Dimensions (Unit : mm) SOP8 (8) (5) (1) (4)  Application Switching Inner circuit (8) (7) (6) (5)  Packaging specifications Type SH8M12 Package Code Basic ordering unit (pieces) Taping TB 2500  (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗2 ∗2 ∗1 (1) (2) (3) ∗1 (4)  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle1% *2 Mounted on a ceramic board. ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Symbol VDSS VGSS ID IDP *1 Is Isp *1 PD Tch Tstg *2 Limits Tr1 : N-ch Tr2 : P-ch 30 20 5 20 1.6 20 30 20 4.5 18 1.6 18 Unit V V A A A A W / TOTAL W / ELEMENT C C Continuous Pulsed Continuous Pulsed 2.0 1.4 150 55 to 150 www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/10 2011.05 - Rev.A Free Datasheet http://www.datasheet4u.com/ SH8M12  Electrical characteristics (Ta = 25 C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay ...