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SH8M13

Rohm

Nch+Pch MOSFET

Data Sheet 4V Drive Nch + Pch MOSFET SH8M13  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1)...


Rohm

SH8M13

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Data Sheet 4V Drive Nch + Pch MOSFET SH8M13  Structure Silicon N-channel MOSFET/ Silicon P-channel MOSFET Features 1) Low on-resistance. 2) Built-in G-S Protection Diode. 3) Small Surface Mount Package (SOP8).  Dimensions (Unit : mm) SOP8 (8) (5) (1) (4)  Application Switching  Packaging specifications Type SH8M13 Package Code Basic ordering unit (pieces) Taping TB 2500   Inner circuit (8) (7) (6) (5)  Absolute maximum ratings (Ta = 25 C) Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body Diode) Total power dissipation Channel temperature Range of storage temperature *1 Pw10s, Duty cycle 1% *2 Mounted on a ceramic board. Symbol VDSS VGSS Limits Tr1 : N-ch Tr2 : P-ch 30 ±20 6.0 24 1.6 24 2.0 1.4 150 55 to 150 30 ±20 7.0 28 1.6 28 Unit V V A A A A W / TOTAL W / ELEMENT C C (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Source (4) Tr2 Gate (5) Tr2 Drain (6) Tr2 Drain (7) Tr1 Drain (8) Tr1 Drain ∗2 ∗2 ∗1 (1) (2) (3) ∗1 (4) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE Continuous Pulsed Continuous Pulsed ID IDP *1 Is Isp PD *1 *2 Tch Tstg www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/10 2011.05 - Rev.A Free Datasheet http://www.datasheet4u.com/ SH8M13  Electrical characteristics (Ta = 25C) Parameter Gate-source leakage Zero gate voltage drain current Gate threshold voltage Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer ...




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