n-channel JFET 8 switch array
Designed for Military and Industrial
Applications •••
• High Speed Sense/Drive Switch Arr...
n-channel JFET 8 switch array
Designed for Military and Industrial
Applications
High Speed Sense/Drive Switch Array
ABSOLUTE MAXIMUM RATINGS (25°C)
For Each Individual Chip:
Gate-Source
Voltage ......................... - 25V Gate-Drain
Voltage .......................... -25V Gate Current .............................. 100 mA Drain Current ............................. 400 mA
Storage Temp Range ............ - 65°C to + 200°C
Oper Temp Range .............. - 55°C to + 150°C Lead Temp (Soldering, 10 sec) .............. +300°C Power Dissipation ......................... 300 mW
Derate above 25°C .................... 2.3 mwrc
BENEFITS
Low RDS(ON) < 7 OHMS High Speed
TR = 1 ns; T(OFF) = 5 ns
High Radiation Resistance
PACKAGE: 16 PIN FLAT PACKAGE
1 0r.s
~1.N/C
2
,
o~ ~o
~o
5 ~o
15
"
"
12
~o 0r.s
7G
11 10
B DIs
~9N/C
e_n.
-ooCO
ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
1
~
--a
-;j
----s
---e
-
7
8
=+
-----;J ~
---,-;-
Characteristic
IGSSA
S IGSSA T BVGSS A T VGSlolfl I 10Iolfi C 10Iolfi
ROSlan)
D C1SS y Crss N lcj A M tlolfl I tf C t,
Min Typical
-25 -5
3 5 5 1
Max 2.0 5
-10 1 5 7 30 15
Unit nA p.A V V nA p.A ohm pi pi ns ns ns ns
Test Condition VGS ~ -15V. VOS ~ 0 VGS ~ -15V. VOS ~ O. TA ~ 12!1'C IG ~ 8p.A. VOS ~ 0 VOS ~ 5V. 10 ~ 100 nA VOS ~ 5V. VGS ~ -10V VOS ~ 5V. VGS ~ -10V. TA ~ 12!1'C VGS ~ O. 10 ~ 10 rnA VOS ~ O. VGS ~ -10V. I ~ 1 mHz vos ~ O. VGS ~ -10V. I ~ 1 mHz
Voo ~ 1.5V. VGSlonl ~ O. VGSlolfl ~ 12V
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Siliconix
3-1...
