Si2304DS

N-Channel 30-V (D-S) MOSFET Si2304DS Vishay Siliconix PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.117 @ VGS = 10 V 0.190 @ VGS = 4.5 V ID (A) 2.5 2.0 TO-236 (SOT-23) G1 S2 3D Top View Si2304DS (A4)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C VDS VGS ID IDM IS PD TJ, Tstg 30 "20 2.5 2.0 10 1.25 1.25 0.80 –55 to 150 Unit V A W _C THERMAL RESISTANCE RATINGS Maximum Junction-to-Ambienta Maximum Junction-to-Ambientc Parameter Symbol RthJA Notes a. Surface Mounted on FR4 Board, t v 5 sec. b. Pulse width limited by maximum junction temperature. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70756 S-63633—Rev. D, 01-Nov-99 Limit 100 166 Unit _C/W www.vishay.com S FaxBack 408-970-5600 1 Si2304DS Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Symbol V(BR)DSS VGS(th) IGSS IDSS On-State Drain Currenta ID(on) Drain-Source On-Resistancea rDS(on) Forward Transconductancea Diode Forward Voltage Dynamic Gate Charge Total Gate...