P-Channel 8 V (D-S) MOSFET
Si2305CDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.035 at VGS = - 4.5 V
-8
0.048 at VGS = - 2.5 V
0.065 at VGS = - 1.8 V
ID (A)d - 5.8 - 5.0 - 4.3
Qg (Typ.) 12 nC
TO-236 (SOT-23)
G1 S2
3D
Top View Si2305CDS (N5)* * Marking Code
Ordering Information: Si2305CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/9.
P-Channel MOSFET
P-Channel 8 V (D-S) MOSFET
Si2305CDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.035 at VGS = - 4.5 V
-8
0.048 at VGS = - 2.5 V
0.065 at VGS = - 1.8 V
ID (A)d - 5.8 - 5.0 - 4.3
Qg (Typ.) 12 nC
TO-236 (SOT-23)
G1 S2
3D
Top View Si2305CDS (N5)* * Marking Code
Ordering Information: Si2305CDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES • Halogen-free According to IEC 61249-2-21
Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS • Load Switch for Portable Devices • DC/DC Converter
S
G
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage
VDS
-8
V
VGS
±8
TC = 25 °C
- 5.8
Continuous Drain Current (TJ = 150 °C)
TC = 70 °C TA = 25 °C
ID
- 4.7 - 4.4a, b
TA = 70 °C
- 3.5a, b
A
Pulsed Drain Current (10 µs Pulse Width)
IDM
- 20
Continuous Source-Drain Diode Current
TC = 25 °C TA = 25 °C
IS
- 1.4 - 0.8a, b
TC = 25 °C
1.7
Maximum Power Dissipation
TC = 70 °C TA = 25 °C
PD
1.1 0.96a, b
W
TA = 70 °C
0.62a, b
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta, c
Maximum Junction-to-Foot (Drain)
Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 175 °C/W. d. TC = 25 °C.
t≤5s Steady State
Document Number: 64847 S10-0720-Rev. C, 29-Mar.