N-Channel Enhancement Mode Field Effect Transistor
Description
Si2306
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m ) Typ
20V 3.6A
33 @ VGS=4.5V 52 @ VGS=2.5V
NOTE The Si2306 is available in a lead-free package
D
S G
ABSOLUTE MAXIUM RATINGS TA=25
Parameter
Dr...
