Si2307 Datasheet
Part Number |
Si2307 |
Manufacturers |
SiPU |
Logo |
|
Description |
P-Channel Enhancement Mode Field Effect Transistor |
Datasheet |
Si2307 Datasheet (PDF) |
Si2307
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m ) Typ
-20V
-4.0A
80@ VGS=-4.5V 100 @ VGS=-2.5V
NOTE The Si2307is available in a lead-free package
D
S G
ABSOLUTE MAXIUM RATINGS TA=25
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuousª@Tj=125
- Pulse d b
Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range
unless otherwise noted
Symbol
VDS VGS ID
Limit
-20 ±12 -4.0
IDM -12
IS -1.25 PD 1.25
TJ,TSTG
-55 to 150
Unit
V V A
A
A W
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to Ambientª
Rth JA
100
/W
1
Si2307
ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted)
Parameter
OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHARACTERITICS
Gate Threshold Voltage
.
Part Number |
SI2307 |
Manufacturers |
MCC |
Logo |
|
Description |
P-Channel Enhancement Mode Field Effect Transistor |
Datasheet |
SI2307 Datasheet (PDF) |
MCC R
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
SI2307
Features
• Halogen free available upon request by adding suffix "-HF" • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1
• TrenchFET Power MOSFET • Marking Code: S7
P-Channel Enhancement Mode
Field Effect Transistor
Maximum Ratings @ 25OC Unless Otherwise Specified
Symbol VDS ID IS VGS
PD RθJA
TJ
TSTG
Parameter Drain-source Voltage Continuous Drain Current Continuous Source-Drain Diode Current Gate-source Voltage
Total Power Dissipation Thermal Resistance Junction to Ambientb
Operating Junction Temperature
.
Part Number |
SI2307 |
Manufacturers |
PUOLOP |
Logo |
|
Description |
-30V P-Channel Enhancement Mode MOSFET |
Datasheet |
SI2307 Datasheet (PDF) |
SI2307
-30V P-Channel Enhancement Mode MOSFET
VDS= -30V RDS(ON), Vgs@-10V, Ids@ -4.1A < 64.5mΩ RDS(ON),
[email protected],
[email protected] < 87m Ω
Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions
D
SOT-23-3L
GS
REF.
A B C D E
F
Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50
0 0.10
0.45 0.55
REF.
G H K J L
M
Millimeter
Min. 1.90 1.00 0.10 0.40 0.85
Max. REF.
1.30 0.20
1.15
0° 10°
Maximum Ratings and Thermal Characteristics (TA = 25 oC unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage
VDS -30 VGS ± 20
Continuous Drain Current Pulsed Drain Current
Maximum Power Dissipation
.
P-Channel Enhancement Mode Field Effect Transistor
Si2307
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m ) Typ
-20V
-4.0A
80@ VGS=-4.5V 100 @ VGS=-2.5V
NOTE The Si2307is available in a lead-free package
D
S G
ABSOLUTE MAXIUM RATINGS TA=25
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-Continuousª@Tj=125
- Pulse d b
Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range
unless otherwise noted
Symbol
VDS VGS ID
Limit
-20 ±12 -4.0
IDM -12
IS -1.25 PD 1.25
TJ,TSTG
-55 to 150
Unit
V V A
A
A W
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to Ambientª
Rth JA
100
/W
1
Si2307
ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted)
Parameter
OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHARACTERITICS
Gate Threshold Voltage
.
2017-03-12 : CYRF89235 DA1134 HR4988 BDX88A BDX88B BDX88C BDX87 BDX87A BDX87B BDX87C