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Si2307 Datasheet

Part Number Si2307
Manufacturers SiPU
Logo SiPU
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet Si2307 DatasheetSi2307 Datasheet (PDF)

Si2307 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ -20V -4.0A 80@ VGS=-4.5V 100 @ VGS=-2.5V NOTE The Si2307is available in a lead-free package D S G ABSOLUTE MAXIUM RATINGS TA=25 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125 - Pulse d b Drain-source Diode Forward Currentª Maximum Power Di.

  Si2307   Si2307






Part Number SI2307
Manufacturers MCC
Logo MCC
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet Si2307 DatasheetSI2307 Datasheet (PDF)

MCC R Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# SI2307 Features • Halogen free available upon request by adding suffix "-HF" • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 • TrenchFET Power MOSFET • Marking Code: S7 P-Channel Enhancement Mode Field Effect Transistor Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID IS VGS PD RθJA TJ TSTG Parameter.

  Si2307   Si2307







Part Number SI2307
Manufacturers PUOLOP
Logo PUOLOP
Description -30V P-Channel Enhancement Mode MOSFET
Datasheet Si2307 DatasheetSI2307 Datasheet (PDF)

SI2307 -30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@ -4.1A < 64.5mΩ RDS(ON), [email protected], [email protected] < 87m Ω Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23-3L GS REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. 1.90 1.00 0.10 0.40 0.85 Max. REF. 1.30 0.20 1.15 0° 10° Maximum Ratings and Thermal Characteris.

  Si2307   Si2307







P-Channel Enhancement Mode Field Effect Transistor

Si2307 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ -20V -4.0A 80@ VGS=-4.5V 100 @ VGS=-2.5V NOTE The Si2307is available in a lead-free package D S G ABSOLUTE MAXIUM RATINGS TA=25 Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125 - Pulse d b Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range unless otherwise noted Symbol VDS VGS ID Limit -20 ±12 -4.0 IDM -12 IS -1.25 PD 1.25 TJ,TSTG -55 to 150 Unit V V A A A W THERMAL CHARACTERISTICS Thermal Resistance, Junction-to Ambientª Rth JA 100 /W 1 Si2307 ELECTRICAL CHARACTERISTICS (TA=25 unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERITICS Gate Threshold Voltage .


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