SI2307DS

Si2307DS Vishay Siliconix P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) –30 rDS(on) (W) 0.080 @ VGS = –10 V 0.140 @ VGS = –4.5 V ID (A) –3 –2 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2307DS (A7)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLSS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Power Dissipationa, b Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit –30 "20 –3 –2.5 –12 –1.25 1.25 Unit V A W 0.8 –55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta t v 5 sec Steady State Notes a. Surface mounted on FR4 board. b. t v 5 sec. Document Number: 70843 S-60570—Rev. A, 16-Nov-98 www.vishay.com S FaxBack 408-970-5600 Symbol RthJA Typical Maximum 100 Unit _C/W 130 2-1 Si2307DS Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain Source On-Resistance Drain-Source On Resistancea Forward Transconductancea Diode Forward Voltage V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) DS( ) gfs VSD VGS = 0 V, ID = –10 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "20 V VDS = –24 V, VGS = 0 V TJ = 55_C VDS v –5 V, VGS = –10 V VGS = –10 V, ID = –3 A VGS = –4.5 V,...