www.vishay.com
Si2308BDS
Vishay Siliconix
N-Channel 60 V (D-S) MOSFET
SOT-23 (TO-236)
D 3
1 G Top View
Marking Code:...
www.vishay.com
Si2308BDS
Vishay Siliconix
N-Channel 60 V (D-S)
MOSFET
SOT-23 (TO-236)
D 3
1 G Top View
Marking Code: Si2308BDS (L8)
PRODUCT SUMMARY
VDS (V) RDS(on) max. (Ω) at VGS = 10 V RDS(on) max. (Ω) at VGS = 4.5 V Qg typ. (nC) ID (A) a Configuration
2 S
60 0.156 0.192
2.3 2.1 Single
FEATURES
Halogen-free according to IEC 61249-2-21 available
TrenchFET® power
MOSFET
100 % Rg and UIS tested Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
D
Battery Switch
DC/DC Converter
G
S N-Channel
MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
Lead (Pb)-free and halogen-free
TSOP-6 Single SI2308BDS-T1-E3 SI2308BDS-T1-GE3 SI2308BDS-T1-BE3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source
voltage Gate-source
voltage
Continuous drain current (TJ = 150 °C)
Pulsed drain current Continuous source-drain diode current Avalanche current Single pulse avalanche energy
Maximum power dissipation
Operating junction and storage temperature range
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
TC = 25 °C TA = 25 °C
L = 0.1 mH
TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
VDS VGS
ID
IDM IS IAS EAS
PD
TJ, Tstg
LIMIT 60 ±20 2.3 1.8
1.9 b,c 1.5 b,c
8 1.39 0.91 b,c
6 1.8 1.66 1.06 1.09 b,c 0.7 b,c -55 to +150
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient b, d Maximum Junction-to-Foot (Drain)
t≤5s Steady State
Notes
a. TC = 25 °C b. Surface mounted on 1" x 1"...
