MOSFET
P-Channel 60-V(D-S) MOSFET
SI2309
Features
◆ TrenchFET Power MOSFET ◆ RoHS Compliant
Absolute Maximum Ratings Ta...
MOSFET
P-Channel 60-V(D-S)
MOSFET
SI2309
Features
◆ TrenchFET Power
MOSFET ◆ RoHS Compliant
Absolute Maximum Ratings Ta=25℃
Parameter
Symbol
Drain-Source
Voltage
VDS
Gate-Source
Voltage Continuous Drain Current(TJ=150℃) *1,2 TA=25℃
TA=100℃
VGS ID
Pulsed Drain Current
IDM
Avalanche Current Power Dissipation*1,2
L = 0.1 mH TA=25℃ TA=70℃
IAS PD
Operating Junction and Storage Temperature Range Tj.Tstg
Maximum Junction-to-Ambient*2
RthJA
Maximum Junction-to-Ambient*3
*1. Pulse Width limited by maximum junction temperature. *2. Surface Mounted on FR4 Board, t≤5sec.
*3. Surface Mounted on FR4 Board.
Rating -60 ±20 -1.25 -0.85 -8 -5 1.25 0.8
-55 to 150 145 175
Unit V V A
A A W
℃ ℃/W
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Revision 2016/8/15 @2016-2017 CCSemi .
MOSFET
Electrical Characteristics Ta=25℃
Parameter Drain-Source Breakdown
Voltage Gate Threshold
Voltage Gate-Body Leakage
Symbol V(BR)DSS VGS(th)
IGSS
Zero Gate
Voltage Drain Current
IDSS
On-State Drain Cu...