P-Channel 1.8-V (G-S) MOSFET
Si2315BDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.050 at VGS = - 4.5 V ...
P-Channel 1.8-V (G-S)
MOSFET
Si2315BDS
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
0.050 at VGS = - 4.5 V - 12 0.065 at VGS = - 2.5 V
0.100 at VGS = - 1.8V
ID (A) - 3.85 - 3.4 - 2.7
FEATURES
Halogen-free Option Available TrenchFET® Power
MOSFETs: 1.8 V Rated
Pb-free Available
RoHS*
COMPLIANT
TO-236 (SOT-23)
G1 S2
3D
Top View Si2315BDS *(M5) * Marking Code
Ordering Information: Si2315BDS-T1 Si2315BDS-T1-E3 (Lead (Pb)-free) Si2315BDS-T1-GE3 (Lead (Pb)-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source
Voltage
VDS - 12
Gate-Source
Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
- 3.85 - 3.0
- 3.0 - 2.45
Pulsed Drain Currenta
IDM - 12
Continuous Source Current (Diode Conduction)a
IS
- 1.0
- 0.62
Power Dissipationa
TA = 25 °C TA = 70 °C
PD
1.19 0.75 0.76 0.48
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
Unit V
A
W °C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes: a. Surface Mounted on FR4 board. b. t ≤ 5 s.
t≤5s Steady State Steady State
Symbol RthJA RthJF
Typ. 85 130 60
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm.
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72014 S-80642-Rev. E, 24-Mar-08
Max. 105 166 75
Unit °C/W
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