Si2320DS
New Product
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
200
rDS(on) (W)
7 @ VGS = ...
Si2320DS
New Product
Vishay Siliconix
N-Channel 200-V (D-S)
MOSFET
PRODUCT SUMMARY
VDS (V)
200
rDS(on) (W)
7 @ VGS = 10 V
ID (A)
"0.28
TO-236 (SOT-23)
G
1 3 D
S
2
Top View Si2320DS (D0)* *Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Currentb Avalanche Currentb L = 0.1 mH Single Avalanche Energy Continuous Source Current (Diode Conduction)a Power Dissipationa Operating Junction and Storage Temperature Range TA= 25_C TA= 70_C TA= 25_C TA= 70_C
Symbol
VDS VGS ID IDM IAS EAS IS
5 sec
"20 "0.28 "0.22
Steady State
"200
Unit
V
"0.22 "0.17 "0.5 "0.5 0.013 "1 mJ A 0.75 W 0.48 β55 to 150 _C A
1.25 PD TJ, Tstg 0.80
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Maximum Junction-to-Foot Notes a. Surface Mounted on 1β x 1β FR4 Board. b. Pulse width limited by maximum junction temperature Document Number: 71084 S-63640βRev. A, 01-Nov -98 www.vishay.com S FaxBack 408-970-5600 t v 5 sec Steady State Steady State
Symbol
RthJA RthJF
Typical
75 120 40
Maximum
100 166 50
Unit
_C/W
2-1
Si2320DS
Vishay Siliconix
New Product
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits Parameter Static
Drain-Source Breakdown
Voltage Gate-Threshold
Voltage Gate-Body Leakage Zero Gate
Voltage Drain Current On-State Drain Currenta Drain-Source On-Resistancea Forward Transconductancea Diode Forward
Voltage V(BR)DSS VGS(th) IGSS IDSS ID...