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Si2333CDS
Vishay Siliconix
P-Channel 12-V (D-S) MOSFET
MOSFET PRODUCT SUMMARY
VDS (V) RDS(on) (Ω)...
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Si2333CDS
Vishay Siliconix
P-Channel 12-V (D-S)
MOSFET
MOSFET PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) 0.035 at VGS = - 4.5 V - 12 0.045 at VGS = - 2.5 V 0.059 at VGS = - 1.8 V ID (A)a - 5.1 - 4.5 - 3.9 9 nC Qg (Typ.)
FEATURES TrenchFET® Power
MOSFET APPLICATIONS
Load Switch PA Switch
RoHS
COMPLIANT
TO-236 (SOT-23)
G
1 3 D
S
2
Top View Si2333CDS (O3)* * Marking Code Ordering Information: Si2333CDS-T1-E3 (Lead (Pb)-free)
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS Limit - 12 ±8 - 7.1 - 5.7 - 5.1b, c - 4.0b, c - 20 - 1.0 - 0.63b, c 2.5 1.6 1.25b, c 0.8b, c - 55 to 150 Unit V
A
Pulsed Drain Current Continuous Source-Drain Diode Current
Maximum Power Dissipation
PD TJ, Tstg
W
Operating Junction and Storage Temperature Range
°C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 166 °C/W.
b, d
≤5s Steady State
Symbol RthJA RthJF
Typical 75 40
Maximum 100 50
Unit °C/W
Document Number: 68717 S-81445-Rev. A, 23-Jun-08
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Si2333CDS
Vishay Siliconix
MOS...
