SI2335DS

Si2335DS New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) –12 rDS(on) (W) 0.051 @ VGS = –4.5 V 0.070 @ VGS = –2.5 V 0.106 @ VGS = –1.8 V ID (A) –4.0 –3.5 –3.0 TO-236 (SOT-23) G 1 3 S 2 D Top View Si2335DS (E5)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS 5 sec –12 $8 –4.0 –3.3 –15 Steady State Unit V –3.2 –2.6 A –1.6 1.25 0.75 0.48 –55 to 150 W _C PD TJ, Tstg 0.8 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. Document Number: 71314 S-02303—Rev. A, 23-Oct-00 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 75 120 40 Maximum 100 166 50 Unit _C/W 1 Si2335DS Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0 V, ID = –10 mA VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "8 V VDS = –9.6 V, VGS = 0 V VDS = –9.6 V, VGS = 0 V, TJ = 55_C ...