SI2336DS

N-Channel 30 V (D-S) MOSFET Si2336DS Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 0.042 at VGS = 4.5 V 30 0.046 at VGS = 2.5 V 0.052 at VGS = 1.8 V TO-236 (SOT-23) ID (A)a 5.2 4.9 4.1 Qg (Typ.) 5.7 nC G1 S2 3D FEATURES TrenchFET® Power MOSFET 100 % Rg Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS DC/DC Converters D Boost Converters G Top View Si2336DS (N4)* * Marking Code Ordering Information: Si2336DS-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ±8 TC = 25 °C 5.2 Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C ID 4.1 4.3b, c TA = 70 °C 3.5b, c A Pulsed Drain Current IDM 20 TC = 25 °C 1.5 Continuous Source-Drain Diode Current TA = 25 °C IS 1b, c TC = 25 °C 1.8 Maximum Power Dissipation TC = 70 °C TA = 25 °C PD 1.1 1.25b, c W TA = 70 °C 0.8b, c Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)d, e 260 THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t5s Steady State Notes: a. TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 130 °C/W. Symbol RthJA RthJF Typical 80 55 Maximum 100...