SI2343CDS

www.DataSheet4U.com Si2343CDS Vishay Siliconix P-Channel 30-V (D-S) MOSFET FEATURES ID (A)a, e - 5.9 7 nC - 4.6 Qg (Typ.) PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) 0.045 at VGS = - 10 V 0.075 at VGS = - 4.5 V Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-236 (SOT-23) Load Switch Notebook Adaptor Switch DC/DC Converter S G 1 3 D G S 2 Top View Si2343CDS (P1)* * Marking Code Ordering Information: Si2343CDS-T1-GE3 (Lead (Pb)-free and Halogen-free) D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit - 30 ± 20 - 5.9 - 4.7 - 4.2b, c - 3.3b, c - 25 - 2.1 - 1b, c 2.5 1.6 1.25b, c 0.8b, c - 55 to 150 °C W A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Maximum Junction-to-Foot (Drain) t≤5s Steady State Symbol RthJA RthJF Typical 75 40 Maximum 100 50 Unit °C/W Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under Steady State conditions is 166 °C/W. e. Package Limited. Document Number: 654...