SI4464DY

N-Channel 200-V (D-S) MOSFET Si4464DY Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 200 0.240 at VGS = 10 V 0.260 at VGS = 6.0 V ID (A) 2.2 2.1 FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET PWM Optimized for Low Qg and Low Rg Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D S1 S2 S3 G4 SO-8 8D 7D 6D 5D Top View Ordering Information: Si4464DY-T1-E3 (Lead (Pb)-free) Si4464DY-T1-GE3 (Lead (Pb)-free and Halogen-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Unit Drain-Source Voltage Gate-Source Voltage VDS 200 V VGS ± 20 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current TA = 25 °C TA = 70 °C ID 2.2 1.7 1.7 1.3 A IDM 8 Single Avalanch Current Single Avalanch Energy L = 0.1 mH IAS 3 EAS 0.45 mJ Continuous Source Current (Diode Conduction)a IS 2.1 1.2 A Maximum Power Dissipationa TA = 25 °C TA = 70 °C PD 2.5 1.5 1.6 0.9 W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes: a. Surface Mounted on 1" x 1" FR4 board. t ≤ 10 s Steady State Steady State Symbol RthJA RthJF Typical 37 68 17 Maximum 50 85 21 Unit °C/W Document Number: 72051 S09-0705-Rev. C, 27-Apr-09 www.vishay.com 1 Si4464DY Vishay Siliconix SPECIFICATIONS TJ = 25 °C...