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Si4484EY
Vishay Siliconix
N-Channel 100-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
100
rDS(on) (W)
0...
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Si4484EY
Vishay Siliconix
N-Channel 100-V (D-S)
MOSFET
PRODUCT SUMMARY
VDS (V)
100
rDS(on) (W)
0.034 @ VGS = 10 V 0.040 @ VGS = 6.0 V
ID (A)
6.9 6.4
D
SO-8
S S S G 1 2 3 4 Top View Ordering Information: Si4484EY Si4484EY-T1 (with Tape and Reel) 8 7 6 5 D D D D S N-Channel
MOSFET G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current (TJ = 175_C)a Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy (Duty Cycle v1%) Continuous Source Current (Diode Maximum Power Dissipationa Operating Junction and Storage Temperature Range Conduction)a TA = 25_C TA = 85_C L = 0.1 0 1 mH TA = 25_C TA = 85_C
Symbol
VDS VGS
10 secs
100 "20 6.9
Steady State
Unit
V
4.8 3.7 30 25 31 mJ 1.5 1.8 1.1 - 55 to 175 W _C A A
ID IDM IAR EAR IS PD TJ, Tstg
5.4
3.1 3.8 2.3
THERMAL RESISTANCE RATINGS
Parameter
t v 10 sec M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71189 S-03951—Rev. C, 26-May-03 www.vishay.com Steady State Steady State RthJA RthJF
Symbol
Typical
33 70 17
Maximum
40 85 21
Unit
_C/W
1
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www.DataSheet.co.kr
Si4484EY
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter Static
Gate Threshold
Voltage Gate-Body Leakage Zero Gate
Voltage Drain Current On-State Drain Currenta Drain-Source On-State Re...
