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Si7115DN
Vishay Siliconix
P-Channel 150 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) - 150 RDS(...
www.DataSheet.co.kr
Si7115DN
Vishay Siliconix
P-Channel 150 V (D-S)
MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) - 150 RDS(on) () 0.295 at VGS = - 10 V 0.315 at VGS = - 6 V ID (A) - 8.9e - 8.6e Qg (Typ.) 23.2 nC
PowerPAK 1212-8
Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power
MOSFET Low Thermal Resistance PowerPAK® Package with Small Size and Low 1 mm Profile 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
3.30 mm
S 1 2 3 4 D 8 7 6 5 D D D S S G
3.30 mm
Active Clamp in Intermediate DC/DC Power Supplies H-Bridge High Side Switch for Lighting Application
S
G
Bottom View Ordering Information: Si7115DN-T1-E3 (Lead (Pb)-free) Si7115DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
P-Channel
MOSFET D
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Drain-Source
Voltage Gate-Source
Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C
c, d
Symbol VDS VGS
Continuous Drain Current (TJ = 150 °C)
ID
Limit - 150 ± 20 - 8.9 - 7.1 - 2.3a, b - 1.9a, b - 15 - 13 - 3a, b 15 11.25 52 33 3.7a, b 2.4a, b - 50 to 150 260
Unit V
Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy
IDM IS IAS EAS
A
mJ
Maximum Power Dissipation
PD
W
°C Soldering Recommendations (Peak Temperature) Notes: a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. See solder profile (www.vishay.c...