SI7120DN

www.DataSheet4U.com Si7120DN Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 FEATURES ID (A) 10 8.2 rDS(on) (W) 0.019 @ VGS = 10 V 0.028 @ VGS = 4.5 V D TrenchFETr Power MOSFET D New Low Thermal Resistance D PowerPAKr 1212-8 Package with Low 1.07-mm Profile D 100% Rg Tested RoHS COMPLIANT Available APPLICATIONS PowerPAK 1212-8 D Primary Side Switch D Synchronous Rectification D 3.30 mm S 1 2 S 3 S 3.30 mm 4 D 8 7 D 6 D 5 D G G Ordering Information: Si7120DN-T1 Si7120DN-T1—E3 (Lead (Pb)-Free) S N-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Single Avalanche Current Single Avalanche Energy Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)b,c L = 0.1 0 1 mH TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS IAS EAS PD TJ, Tstg 10 secs 60 "20 10 8.0 40 3.2 22 24 3.8 2.4 Steady State Unit V 6.3 5.1 A 1.3 mJ 1.5 1.0 W −55 to 150 260 _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Case (Drain) t v 10 sec Steady State Steady State Symbol RthJA RthJC Typical 26 65 1.9 Maximum 33 81 2.4 Unit _C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Solder Profile (http://www.vishay.com/doc?7...